Field effect tube |MOSFET|MOS tube - BYCHIP

MOS tube is also called field effect tube, which can be divided into PMOS tube (P channel type) and NMOS (N channel type) tube, which is an insulated gate field effect tube. NMOS is also called N-type metal oxide semiconductor, and the circuit composed of NMOS is the NMOS integrated circuit.

As a professional discrete device manufacturer, Heketai produces secondary and tertiary tubes, MOS tubes, bridge pile and other products are widely used in the market, this time Heketai mainly explains the typical application cases of N-channel MOSFET products HKTQ50N03 and HKTQ80N03.

An N-channel MOS tube is a three-terminal device that contains an n-channel region located between the source and drain terminals, with terminals G(gate), D(drain), and S(source). The symbol of the n-channel MOS tube is shown in Figure N. The direction of the arrow symbol is inward. The arrow symbol specifies the type of channel, which is represented as P channel or N channel.

Figure N

N-channel MOS tubes work like this, in an n-channel MOS tube, the channel is created when electrons arrive, the +Ve voltage also draws electrons from the N+ source and drain regions into the channel, and once a voltage is applied between the drain and source, the current flows freely between the source and drain. The voltage at the gate only controls the charge carrier electrons in the channel. Conversely, if a -Ve voltage is applied at the gate end, a hole channel is formed below the oxide layer.

The application of a product is inseparable from its product characteristics, and the two N-channel MOSFET products of Heke Tech have the characteristics of low conduction internal resistance, small package and stable performance, and the products are widely used in PD fast charge, battery management system, power tools and so on.
HKTQ50N03
Dynamic parameters of HKTQ50N03
Typical circuit

For example, the MOS switch circuit, as shown in Figure 1, is a commonly used low-power drive circuit, which is suitable for low-power switchgear that does not require isolation.
(Figure 1)
(Figure 2)

The driver circuit switch shown in Figure 2 has the characteristics of fast speed and strong driving ability. In order to prevent two MOS tubes from passing through, a small resistance of 0.5 to 1Ω is usually connected in series for current limiting. The circuit is suitable for medium power switchgear that does not require isolation.