Field effect tube |MOSFET|MOS tube - BYCHIP

A MOS tube is a device semiconductor that works by applying an inverse voltage PN junction between a P-type semiconductor and an N-type semiconductor to achieve electrical conductivity. In semiconductors, electrons must jump from low to high energy levels to form free carriers. When a semiconductor device is biased (a voltage between P-type and N-type), holes move from the P pole to the electrode, while electrons move from the N pole to the P pole. Due to potential difference, most of the carriers move in the direction of the concentration difference gradient, resulting in reverse breakdown of the PN junction. When the applied voltage exceeds a certain value, the number of a few carriers is more than double the number of most carriers, and the reverse puncture phenomenon will occur.

In the field of power adapters, smart home and other products, there are some pain points that need to be solved:


Difficulties in improving product work efficiency;

Product temperature rise test failed;

The device itself heating treatment is difficult;

The device wafer is faulty.